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Samsung puts 128-gigabit 3-bit cell flash into production
Plans to build more memory cards
Flash memory advancements usually sing the same tune: faster, smaller and high-density.
Improve one of these attributes, and you've go the makings of a better
chip on your hands. Samsung is focusing on the latter, announcing the
mass production of its 10 nanometer 128-gigabit three-bit
multi-level-cell NAND flash.
That mouthful translates into flash chips
with more memory per cell in a small form factor. Sammy says the new
chip is capable of 400Mbps, and claims the highest density in the
industry. The new silicon will be used to expand the company's supply of
128GB memory cards and high-volume solid state drives.
It's also well positioned to be a better part for devices with embedded
NAND storage, which Samsung hopes will keep it competitive. You'll find
Samsung's announcement and all the granular details after the break.
© 2013 AOL
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